Semiconductor devices

ABSTRACT

A semiconductor device includes a column operation control circuit and a bank column address generation circuit. The column operation control circuit generates first and second bank address control signals as well as first and second bank control pulses from first and second bank selection signals in response to a synthesis control pulse such that data in a first bank and data in a second bank are simultaneously outputted in a first mode. The bank column address generation circuit generates first and second bank column addresses for selecting the first and second banks from a column address in response to the first and second bank address control signals.

CROSS-REFERENCE TO RELATED APPLICATIONS

The present application claims priority under 35 U.S.C § 119(a) toKorean Application No. 10-2018-0047009, filed on Apr. 23, 2018, which isincorporated herein by reference in its entirety.

BACKGROUND 1. Technical Field

Embodiments of the present disclosure relate to semiconductor devicesperforming column operations.

2. Related Art

In general, semiconductor devices, such as dynamic random access memory(DRAM) devices, may include a plurality of bank groups having cellarrays which are selected by address. Each of the bank groups may berealized to include a plurality of banks. A semiconductor device mayperform a column operation that selects any one of the plurality of bankgroups and outputs data stored in the cell array included in theselected bank group through input/output (I/O) lines.

SUMMARY

In accordance with an embodiment of the present teachings, asemiconductor device includes a column operation control circuit and abank column address generation circuit. The column operation controlcircuit is configured to generate first and second bank address controlsignals as well as first and second bank control pulses from first andsecond bank selection signals in response to a synthesis control pulsesuch that data in a first bank and data in a second bank aresimultaneously outputted in a first mode. The bank column addressgeneration circuit is configured to generate first and second bankcolumn addresses for selecting the first and second banks from a columnaddress in response to the first and second bank address controlsignals.

In accordance with another embodiment of the present teachings, asemiconductor device includes a column operation control circuit and abank column address generation circuit. The column operation controlcircuit is configured to generate a first bank address control signaland a bank control pulse from a first bank selection signal in responseto a synthesis control pulse such that data are inputted into a secondbank after data are inputted into a first bank. The column operationcontrol circuit is also configured to generate a second bank addresscontrol signal and an internal bank control pulse from a second bankselection signal in response to an internal synthesis control pulse. Thebank column address generation circuit is configured to generate firstand second bank column addresses for selecting the first and secondbanks from a column address in response to the first and second bankaddress control signals.

In accordance with an additional embodiment of the present teachings, asemiconductor device includes a synthesis control pulse generationcircuit and a column operation control circuit. The synthesis controlpulse generation circuit is configured to generate a synthesis controlpulse in synchronization with a read command pulse, wherein the readcommand pulse is created by decoding an external control signal toactivate a first mode. The synthesis control pulse generation circuit isfurther configured to generate the synthesis control pulse and aninternal synthesis control pulse in synchronization with a write commandpulse, wherein the write command pulse is created by decoding theexternal control signal to activate a second mode. The column operationcontrol circuit is configured to generate first and second bank addresscontrol signals as well as first and second bank control pulses fromfirst and second bank selection signals in response to the synthesiscontrol pulse such that data in a first bank and data in a second bankare simultaneously outputted in the first mode.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows a block diagram illustrating a configuration of asemiconductor device, according to an embodiment of the presentdisclosure.

FIG. 2 shows a table illustrating various logic level combinations of anexternal control signal, used in the semiconductor device of FIG. 1, forgenerating a command pulse and an address.

FIG. 3 shows a block diagram illustrating a configuration of the columncontrol pulse generation circuit included in the semiconductor device ofFIG. 1.

FIG. 4 shows a circuit diagram illustrating the control pulse synthesiscircuit included in the semiconductor device of FIG. 1.

FIG. 5 shows a block diagram illustrating a configuration of the columnoperation control circuit included in the semiconductor device of FIG.1.

FIG. 6 shows a circuit diagram illustrating the first column operationcontrol circuit included in the column operation control circuit of FIG.5.

FIG. 7 shows a circuit diagram illustrating the second column operationcontrol circuit included in the column operation control circuit of FIG.5.

FIG. 8 shows a circuit diagram illustrating the third column operationcontrol circuit included in the column operation control circuit of FIG.5.

FIG. 9 shows a circuit diagram illustrating the fourth column operationcontrol circuit included in the column operation control circuit of FIG.5.

FIG. 10 shows a block diagram illustrating a configuration of the bankcolumn address generation circuit included in the semiconductor deviceof FIG. 1.

FIG. 11 shows a circuit diagram illustrating the column input/output(I/O) pulse synthesis circuit included in the semiconductor device ofFIG. 1.

FIGS. 12 and 13 show timing diagrams illustrating operations of thesemiconductor device of FIGS. 1.

FIG. 14 shows a block diagram illustrating a configuration of anelectronic system employing the semiconductor device shown in FIG. 1.

DETAILED DESCRIPTION OF THE EMBODIMENTS

Various embodiments of the present disclosure are described hereinafterwith reference to the accompanying drawings. The embodiments describedherein are for illustrative purposes only and are not intended to limitthe scope of the present disclosure.

As illustrated in FIG. 1, a semiconductor device 100 according to anembodiment may include a command pulse generation circuit 1, a bankaddress generation circuit 2, a synthesis control pulse generationcircuit 3, a bank selection signal generation circuit 4, a columnoperation control circuit 5, a bank column address generation circuit 6,a column input/output (I/O) pulse synthesis circuit 7, and a data I/Ocontrol circuit 8.

The command pulse generation circuit 1 may generate a read command pulseERD and a write command pulse EWT in response to first to L^(th)external control signals CA<1:L>, an internal clock signal ICLK, and aninverted internal clock signal ICLKB. The first to L^(th) externalcontrol signals CA<1:L> may include a command and an address that areprovided by an external device. The internal clock signal ICLK may betoggled in synchronization with a rising edge of a clock signal (notshown) that is provided by the external device or another externaldevice. The inverted internal clock signal ICLKB may be toggled insynchronization with a falling edge of the clock signal (not shown). Thenumber ‘L’ of bits included in the first to L^(th) external controlsignals CA<1:L> may be different in different embodiments.

The command pulse generation circuit 1 may decode the first to L^(th)external control signals CA<1:L> in synchronization with the internalclock signal ICLK or the inverted internal clock signal ICLKB togenerate the read command pulse ERD for execution of a read operation.In an embodiment, the command pulse generation circuit 1 decodes thefirst to L^(th) external control signals CA<1:L> in synchronization withthe internal clock signal ICLK to generate the read command pulse ERDfor performing the read operation. A point in time when the read commandpulse ERD is generated for the read operation may be determined as thepoint in time when the first to L^(th) external control signals CA<1:L>having a first predetermined logic level combination is inputted to thecommand pulse generation circuit 1 in synchronization with a rising edgeof the internal clock signal ICLK. In some other embodiments, the readcommand pulse ERD may be generated in synchronization with the invertedinternal clock signal ICLKB.

The command pulse generation circuit 1 may decode the first to L^(th)external control signals CA<1:L> in synchronization with the internalclock signal ICLK or the inverted internal clock signal ICLKB togenerate the write command pulse EWT for execution of a write operation.In an embodiment, the command pulse generation circuit 1 decodes thefirst to L^(th) external control signals CA<1:L> in synchronization withthe internal clock signal ICLK to generate the write command pulse EWTfor performing the write operation. A point in time when the writecommand pulse EWT is generated for the write operation may be determinedas the point in time when the first to L^(th) external control signalsCA<1:L> having a second predetermined logic level combination isinputted to the command pulse generation circuit 1 in synchronizationwith a rising edge of the internal clock signal ICLK. In some otherembodiments, the write command pulse EWT may be generated insynchronization with the inverted internal clock signal ICLKB.

The bank address generation circuit 2 may generate first to fourth bankaddresses IBA<1:4> and a column address CADD in response to the first toL^(th) external control signals CA<1:L>, the internal clock signal ICLK,and the inverted internal clock signal ICLKB. The bank addressgeneration circuit 2 may decode the first to L^(th) external controlsignals CA<1:L> in synchronization with the internal clock signal ICLKor the inverted internal clock signal ICLKB to generate the first tofourth bank addresses IBA<1:4> and the column address CADD. A logiclevel combination of the first to fourth bank addresses IBA<1:4> may bedetermined as a logic level combination of some signals among the firstto L^(th) external control signals CA<1:L> that are inputted to the bankaddress generation circuit 2 in synchronization with a rising edge ofthe internal clock signal ICLK or a rising edge of the inverted internalclock signal ICLKB. A logic level combination of bits included in thecolumn address CADD may be determined as a logic level combination ofsome other signals among the first to L^(th) external control signalsCA<1:L> that are inputted to the bank address generation circuit 2 insynchronization with a rising edge of the internal clock signal ICLK ora rising edge of the inverted internal clock signal ICLKB. The number ofbits included in the column address CADD may be different in differentembodiments.

The synthesis control pulse generation circuit 3 may generate asynthesis control pulse AYP_SUM and an internal synthesis control pulseIAYP_SUM in response to the read command pulse ERD and the write commandpulse EWT. The synthesis control pulse generation circuit 3 may generatethe synthesis control pulse AYP_SUM and the internal synthesis controlpulse IAYP_SUM if the read command pulse ERD or the write command pulseEWT occurs. The synthesis control pulse generation circuit 3 may includea column control pulse generation circuit 31 and a control pulsesynthesis circuit 32.

The column control pulse generation circuit 31 may generate a readcolumn control pulse RDAYP, an internal read column control pulseIRDAYP, a write column control pulse WTAYP, and an internal write columncontrol pulse IWTAYP in response to the read command pulse ERD and thewrite command pulse EWT.

The column control pulse generation circuit 31 may generate the readcolumn control pulse RDAYP and the internal read column control pulseIRDAYP in response to the read command pulse ERD. The column controlpulse generation circuit 31 may sequentially generate the read columncontrol pulse RDAYP and the internal read column control pulse IRDAYPafter a first predetermined period of time (also referred to simply as“a period”) elapses from a point in time when the read command pulse ERDis created. The column control pulse generation circuit 31 may shift theread command pulse ERD by the first predetermined period to generate theread column control pulse RDAYP. The first predetermined period by whichthe read command pulse ERD is shifted may be set according to a readlatency. The first predetermined period by which the read command pulseERD is shifted may be different in different embodiments. The columncontrol pulse generation circuit 31 may shift the read column controlpulse RDAYP by a second predetermined period to generate the internalread column control pulse IRDAYP. The second predetermined period bywhich the read column control pulse RDAYP is shifted may be a periodwhich is set to perform a column operation according to a burst length.The second predetermined period by which the read column control pulseRDAYP is shifted may be different in different embodiments.

The word “predetermined” as used herein with respect to a parameter,such as a predetermined period, means that a value for the parameter isdetermined prior to the parameter being used in a process or algorithm.For some embodiments, the value for the parameter is determined beforethe process or algorithm begins. In other embodiments, the value for theparameter is determined during the process or algorithm but before theparameter is used in the process or algorithm.

The column control pulse generation circuit 31 may generate the writecolumn control pulse WTAYP and the internal write column control pulseIWTAYP in response to the write command pulse EWT. The column controlpulse generation circuit 31 may sequentially generate the write columncontrol pulse WTAYP and the internal write column control pulse IWTAYPafter a third predetermined period elapses from a point in time when thewrite command pulse EWT is created. The column control pulse generationcircuit 31 may shift the write command pulse EWT by the thirdpredetermined period to generate the write column control pulse WTAYP.The third predetermined period by which the write command pulse EWT isshifted may be set according to a write latency. The third predeterminedperiod by which the write command pulse EWT is shifted may be differentin different embodiments. The column control pulse generation circuit 31may shift the write column control pulse WTAYP by a fourth predeterminedperiod to generate the internal write column control pulse IWTAYP. Thefourth predetermined period by which the write column control pulseWTAYP is shifted may be a period which is set to perform the columnoperation according to the burst length. The fourth predetermined periodby which the write column control pulse WTAYP is shifted may bedifferent in different embodiments.

The control pulse synthesis circuit 32 may generate the synthesiscontrol pulse AYP_SUM and the internal synthesis control pulse IAYP_SUMin response to the read column control pulse RDAYP, the internal readcolumn control pulse IRDAYP, the write column control pulse WTAYP, andthe internal write column control pulse IWTAYP. The control pulsesynthesis circuit 32 may generate the synthesis control pulse AYP_SUM ifthe read column control pulse RDAYP or the write column control pulseWTAYP is created. The control pulse synthesis circuit 32 may generatethe internal synthesis control pulse IAYP_SUM if the internal readcolumn control pulse IRDAYP or the internal write column control pulseIWTAYP is created.

The bank selection signal generation circuit 4 may generate first tofourth bank selection signals BG<1:4> from the first to fourth bankaddresses IBA<1:4> in response to the read command pulse ERD and thewrite command pulse EWT. The bank selection signal generation circuit 4may decode the first to fourth bank addresses IBA<1:4> to generate thefirst to fourth bank selection signals BG<1:4>, if the read commandpulse ERD or the write command pulse EWT is created. A signal enabledamong the first to fourth bank selection signals BG<1:4> for each ofvarious logic level combinations of the first to fourth bank addressesIBA<1:4> may be different in different embodiments.

The column operation control circuit 5 may generate first to fourth bankaddress control signals CADDL_BG<1:4>, first to fourth bank controlpulses AYP_BG<1:4>, and first to fourth internal bank control pulsesIAYP_BG<1:4> in response to the synthesis control pulse AYP_SUM, theinternal synthesis control pulse IAYP_SUM, the first to fourth bankselection signals BG<1:4>, a mode signal 8B_MB, a mode write signal8B_WRB, and a mode read signal 8B_RDB. The mode signal 8B_MB may beenabled to have a logic “low” level in an eight-bank mode. A four-bankmode, the eight-bank mode, and a sixteen-bank mode may be provided bythe double data rate (e.g., 5th generation DDR5) memory devices. Thefour-bank mode may be referred to as a bank group mode. Bank groups mayinclude a plurality of banks. For example, each of the bank groups mayinclude four banks. In the four-bank mode, the column operation of onebank included in one bank group may be performed by one command. In theeight-bank mode, the column operations of two banks, which arerespectively included in two separate bank groups, may be sequentiallyperformed by one command. In the sixteen-bank mode, the columnoperations of four banks, which are respectively included in fourseparate bank groups, may be sequentially performed by one command. Theeight-bank mode may include an eight-bank read mode and an eight-bankwrite mode. The mode write signal 8B_WRB may be enabled to have a logic“low” level in the eight-bank write mode so that data are inputted totwo banks included in two separate bank groups by one write command. Themode read signal 8B_RDB may be enabled to have a logic “low” level inthe eight-bank read mode so that data stored in two banks included intwo separate bank groups are outputted by one read command. Logic levelsof the mode signal 8B_MB, the mode write signal 8B_WRB, and the moderead signal 8B_RDB, when enabled, may be different in differentembodiments.

The column operation control circuit 5 may latch the first to fourthbank selection signals BG<1:4> in synchronization with the synthesiscontrol pulse AYP_SUM to generate the first to fourth bank addresscontrol signals CADDL_BG<1:4> and the first to fourth bank controlpulses AYP_BG<1:4>, if the semiconductor device 100 is out of theeight-bank mode. The column operation control circuit 5 may latch thefirst to fourth bank selection signals BG<1:4> in synchronization withthe internal synthesis control pulse IAYP_SUM to generate the first tofourth internal bank control pulses IAYP_BG<1:4>, if the semiconductordevice 100 is out of the eight-bank mode.

The column operation control circuit 5 may latch the first to fourthbank selection signals BG<1:4> in synchronization with the synthesiscontrol pulse AYP_SUM to generate the first to fourth bank addresscontrol signals CADDL_BG<1:4> and the first to fourth bank controlpulses AYP_BG<1:4>, if the semiconductor device 100 is in the eight-bankread mode.

The column operation control circuit 5 may latch the first and secondbank selection signals BG<1:2> in synchronization with the synthesiscontrol pulse AYP_SUM to generate the first and second bank addresscontrol signals CADDL_BG<1:2> and the first and second bank controlpulses AYP_BG<1:2>, in the eight-bank write mode. Signals latched by thecolumn operation control circuit 5 synchronized with the synthesiscontrol pulse AYP_SUM in the eight-bank write mode may be selected fromthe first to fourth bank selection signals BG<1:4> to be differentaccording to embodiment. The column operation control circuit 5 maylatch the third and fourth bank selection signals BG<3:4> insynchronization with the internal synthesis control pulse IAYP_SUM togenerate the third and fourth internal bank control pulses IAYP_BG<3:4>,in the eight-bank write mode. Signals latched by the column operationcontrol circuit 5 synchronized with the internal synthesis control pulseIAYP_SUM in the eight-bank write mode may be selected from the first tofourth bank selection signals BG<1:4> to be different according toembodiment.

The bank column address generation circuit 6 may generate first tofourth bank column addresses BYADD_BG<1:4> from the column address CADDin response to the first to fourth bank address control signalsCADDL_BG<1:4>. The bank column address generation circuit 6 may latchthe column address CADD to output the latched column address as thefirst bank column address BYADD_BG<1> if the first bank address controlsignal CADDL_BG<1> is enabled. The first bank address control signalCADDL_BG<1> may be enabled to have a logic “high” level or a logic “low”level according to embodiment. The first bank column address BYADD_BG<1>may include the same bits as the column address CADD. The bank columnaddress generation circuit 6 may latch the column address CADD to outputthe latched column address as the second bank column address BYADD_BG<2>if the second bank address control signal CADDL_BG<2> is enabled. Thesecond bank address control signal CADDL_BG<2> may be enabled to have alogic “high” level or a logic “low” level according to embodiment. Thesecond bank column address BYADD_BG<2> may include the same bits as thecolumn address CADD. The bank column address generation circuit 6 maylatch the column address CADD to output the latched column address asthe third bank column address BYADD_BG<3> if the third bank addresscontrol signal CADDL_BG<3> is enabled. The third bank address controlsignal CADDL_BG<3> may be enabled to have a logic “high” level or alogic “low” level according to embodiment. The third bank column addressBYADD_BG<3> may include the same bits as the column address CADD. Thebank column address generation circuit 6 may latch the column addressCADD to output the latched column address as the fourth bank columnaddress BYADD_BG<4> if the fourth bank address control signalCADDL_BG<4> is enabled. The fourth bank address control signalCADDL_BG<4> may be enabled to have a logic “high” level or a logic “low”level according to embodiment. The fourth bank column addressBYADD_BG<4> may include the same bits as the column address CADD.

The column I/O pulse synthesis circuit 7 may generate first to fourthbank synthesis control pulses AYPSUM_BG<1:4> in response to the first tofourth bank control pulses AYP_BG<1:4> and the first to fourth internalbank control pulses IAYP_BG<1:4>. The column I/O pulse synthesis circuit7 may generate the first bank synthesis control pulse AYPSUM_BG<1> ifthe first bank control pulse AYP_BG<1> or the first internal bankcontrol pulse IAYP_BG<1> is created. The column I/O pulse synthesiscircuit 7 may generate the second bank synthesis control pulseAYPSUM_BG<2> if the second bank control pulse AYP_BG<2> or the secondinternal bank control pulse IAYP_BG<2> is created. The column I/O pulsesynthesis circuit 7 may generate the third bank synthesis control pulseAYPSUM_BG<3> if the third bank control pulse AYP_BG<3> or the thirdinternal bank control pulse IAYP_BG<3> is created. The column I/O pulsesynthesis circuit 7 may generate the fourth bank synthesis control pulseAYPSUM_BG<4> if the fourth bank control pulse AYP_BG<4> or the fourthinternal bank control pulse IAYP_BG<4> is created.

The data I/O control circuit 8 may control a data I/O operation of thesemiconductor device 100 in response to the first to fourth bank columnaddresses BYADD_BG<1:4> and the first to fourth bank synthesis controlpulses AYPSUM_BG<1:4>. The data I/O control circuit 8 may perform thecolumn operation of a bank selected by the first bank column addressBYADD_BG<1> if the first bank synthesis control pulse AYPSUM_BG<1> iscreated. For example, if first to fourth bank groups are included in thesemiconductor device 100 and a bank included in the first bank group isselected by the first bank column address BYADD_BG<1>, the same numberof data as bits set according to the burst length may be sequentiallyinputted to or outputted from the selected bank included in the firstbank group. The data I/O control circuit 8 may perform the columnoperation of a bank selected by the second bank column addressBYADD_BG<2> if the second bank synthesis control pulse AYPSUM_BG<2> iscreated. For example, if first to fourth bank groups are included in thesemiconductor device 100 and a bank included in the second bank group isselected by the second bank column address BYADD_BG<2>, the same numberof data as bits set according to the burst length may be sequentiallyinputted to or outputted from the selected bank included in the secondbank group. The data I/O control circuit 8 may perform the columnoperation of a bank selected by the third bank column addressBYADD_BG<3> if the third bank synthesis control pulse AYPSUM_BG<3> iscreated. For example, if first to fourth bank groups are included in thesemiconductor device 100 and a bank included in the third bank group isselected by the third bank column address BYADD_BG<3>, the same numberof data as bits set according to the burst length may be sequentiallyinputted to or outputted from the selected bank included in the thirdbank group. The data I/O control circuit 8 may perform the columnoperation of a bank selected by the fourth bank column addressBYADD_BG<4> if the fourth bank synthesis control pulse AYPSUM_BG<4> iscreated. For example, if first to fourth bank groups are included in thesemiconductor device 100 and a bank included in the fourth bank group isselected by the fourth bank column address BYADD_BG<4>, the same numberof data as bits set according to the burst length may be sequentiallyinputted to or outputted from the selected bank included in the fourthbank group.

Referring to FIG. 2, a command pulse and an address generated accordingto a logic level combination of the first to fourth external controlsignals CA<1:4> are listed. If the first to fourth external controlsignals CA<1:4> are set to have a logic level combination of ‘A’ insynchronization with a rising edge of the internal clock signal ICLK,then a command pulse for performing the write operation may begenerated. For the first to fourth external control signals CA<1:4>, thelogic level combination of ‘A’ means that the first external controlsignal CA<1> has a logic “low(L)” level and the second and thirdexternal control signals CA<2:3> have a logic “high(H)” level. In such acase, the fourth external control signal CA<4> may be irrelevant, asindicated in FIG. 2 by the fourth external control signal CA<4> beingcrossed out. After the command pulse for the write operation isgenerated, the first to fourth external control signals CA<1:4> inputtedto the semiconductor device 100 in synchronization with a falling edgeof the internal clock signal ICLK may be generated as the first tofourth bank addresses IBA<1:4> for the write operation.

If the first to fourth external control signals CA<1:4> are set to havea logic level combination of ‘B’ in synchronization with a rising edgeof the internal clock signal ICLK, then a command pulse for performingthe read operation may be generated. In the first to fourth externalcontrol signals CA<1:4>, the logic level combination of ‘B’ means thatthe first external control signal CA<1> has a logic “high(H)” level andthe second external control signal CA<2> has a logic “low(L)” level. Insuch a case, the third and fourth external control signals CA<3:4> maybe irrelevant, as indicated in FIG. 2 by the third and fourth externalcontrol signals CA<3:4> being crossed out. After the command pulse forthe read operation is generated, the first to fourth external controlsignals CA<1:4> inputted to the semiconductor device 100 insynchronization with a falling edge of the internal clock signal ICLKmay be generated as the first to fourth bank addresses IBA<1:4> for theread operation.

Referring to FIG. 3, the column control pulse generation circuit 31 mayinclude a read column control pulse generator 311, an internal readcolumn control pulse generator 312, a write column control pulsegenerator 313, and an internal write column control pulse generator 314.

The read column control pulse generator 311 may shift the read commandpulse ERD by the first predetermined period to generate the read columncontrol pulse RDAYP. The read column control pulse generator 311 may beconfigured to shift the read command pulse ERD by the firstpredetermined period which is set according to the read latency. Theinternal read column control pulse generator 312 may shift the readcolumn control pulse RDAYP by the second predetermined period togenerate the internal read column control pulse IRDAYP. The internalread column control pulse generator 312 may be configured to shift theread column control pulse RDAYP by the second predetermined period whichis set to perform the column operation according to the burst lengthduring the read operation.

The write column control pulse generator 313 may shift the write commandpulse EWT by the third predetermined period to generate the write columncontrol pulse WTAYP. The write column control pulse generator 313 may beconfigured to shift the write command pulse EWT by the thirdpredetermined period which is set according to the write latency. Theinternal write column control pulse generator 314 may shift the writecolumn control pulse WTAYP by the fourth predetermined period togenerate the internal write column control pulse IWTAYP. The internalwrite column control pulse generator 314 may be configured to shift thewrite column control pulse WTAYP by the fourth predetermined periodwhich is set to perform the column operation according to the burstlength during the write operation. The read column control pulsegenerator 311, the internal read column control pulse generator 312, thewrite column control pulse generator 313, and the internal write columncontrol pulse generator 314 may be realized using shift registers ordelay circuits according to embodiment.

Referring to FIG. 4, the control pulse synthesis circuit 32 may includeNOR gates NOR31 and NOR32 and inverters IV31 and IV32. The NOR gateNOR31 and the inverter IV31 may perform a logical OR operation of theread column control pulse RDAYP and the write column control pulse WTAYPto generate the synthesis control pulse AYP_SUM. The synthesis controlpulse AYP_SUM may be generated if the read column control pulse RDAYP orthe write column control pulse WTAYP is created. The NOR gate NOR32 andthe inverter IV32 may perform a logical OR operation of the internalread column control pulse IRDAYP and the internal write column controlpulse IWTAYP to generate the internal synthesis control pulse IAYP_SUM.The internal synthesis control pulse IAYP_SUM may be generated if theinternal read column control pulse IRDAYP or the internal write columncontrol pulse IWTAYP is created.

Referring to FIG. 5, the column operation control circuit 5 may includea first column operation control circuit 51, a second column operationcontrol circuit 53, a third column operation control circuit 55, and afourth column operation control circuit 57.

The first column operation control circuit 51 may generate the firstbank address control signal CADDL_BG<1>, the first bank control pulseAYP_BG<1>, and the first internal bank control pulse IAYP_BG<1> inresponse to the synthesis control pulse AYP_SUM, the internal synthesiscontrol pulse IAYP_SUM, the first bank selection signal BG<1>, and themode signal 8B_MB. The first column operation control circuit 51 maygenerate the first bank address control signal CADDL_BG<1> and the firstbank control pulse AYP_BG<1> from the first bank selection signal BG<1>,which is latched in synchronization with the synthesis control pulseAYP_SUM. The first column operation control circuit 51 may receive themode signal 8B_MB, which is disabled if the semiconductor device 100 isout of the eight-bank mode, and may generate the first internal bankcontrol pulse IAYP_BG<1> from the first bank selection signal BG<1>,which is latched in synchronization with the internal synthesis controlpulse IAYP_SUM. The first column operation control circuit 51 mayreceive the mode signal 8B_MB, which is enabled in the eight-bank mode,and may interrupt the creation of the first internal bank control pulseIAYP_BG<1>.

The second column operation control circuit 53 may generate the secondbank address control signal CADDL_BG<2>, the second bank control pulseAYP_BG<2>, and the second internal bank control pulse IAYP_BG<2> inresponse to the synthesis control pulse AYP_SUM, the internal synthesiscontrol pulse IAYP_SUM, the second bank selection signal BG<2>, and themode signal 8B_MB. The second column operation control circuit 53 maygenerate the second bank address control signal CADDL_BG<2> and thesecond bank control pulse AYP_BG<2> from the second bank selectionsignal BG<2>, which is latched in synchronization with the synthesiscontrol pulse AYP_SUM. The second column operation control circuit 53may receive the mode signal 8B_MB, which is disabled if thesemiconductor device 100 is out of the eight-bank mode, and may generatethe second internal bank control pulse IAYP_BG<2> from the second bankselection signal BG<2>, which is latched in synchronization with theinternal synthesis control pulse IAYP_SUM. The second column operationcontrol circuit 53 may receive the mode signal 8B_MB, which is enabledin the eight-bank mode, and may interrupt the creation of the secondinternal bank control pulse IAYP_BG<2>.

The third column operation control circuit 55 may generate the thirdbank address control signal CADDL_BG<3>, the third bank control pulseAYP_BG<3>, and the third internal bank control pulse IAYP_BG<3> inresponse to the synthesis control pulse AYP_SUM, the internal synthesiscontrol pulse IAYP_SUM, the third bank selection signal BG<3>, the modewrite signal 8B_WRB, and the mode read signal 8B_RDB.

The third column operation control circuit 55 may receive the mode writesignal 8B_WRB, which is disabled if the semiconductor device 100 is outof the eight-bank write mode, and may generate the third bank controlpulse AYP_BG<3> from the third bank selection signal BG<3>, which islatched in synchronization with the synthesis control pulse AYP_SUM. Thethird column operation control circuit 55 may receive the mode writesignal 8B_WRB, which is enabled in the eight-bank write mode, and mayinterrupt the creation of the third bank control pulse AYP_BG<3>.

The third column operation control circuit 55 may receive the mode readsignal 8B_RDB, which is disabled if the semiconductor device 100 is outof the eight-bank read mode, and may generate the third internal bankcontrol pulse IAYP_BG<3> from the third bank selection signal BG<3>,which is latched in synchronization with the internal synthesis controlpulse IAYP_SUM. The third column operation control circuit 55 mayreceive the mode read signal 8B_RDB, which is enabled in the eight-bankread mode, and may interrupt the creation of the third internal bankcontrol pulse IAYP_BG<3>.

The third column operation control circuit 55 may receive the modesignal 8B_MB, which is disabled if the semiconductor device 100 is outof the eight-bank write mode and the eight-bank read mode, and maygenerate the third bank address control signal CADDL_BG<3> from thethird bank selection signal BG<3>, which is latched in synchronizationwith the synthesis control pulse AYP_SUM. The third column operationcontrol circuit 55 may receive the mode read signal 8B_RDB, which isenabled in the eight-bank read mode, and may generate the third bankaddress control signal CADDL_BG<3> from the third bank selection signalBG<3>, which is latched in synchronization with the synthesis controlpulse AYP_SUM. The third column operation control circuit 55 may receivethe mode write signal 8B_WRB, which is enabled in the eight-bank writemode, and may generate the third bank address control signal CADDL_BG<3>from the third bank selection signal BG<3>, which is latched insynchronization with the internal synthesis control pulse IAYP_SUM.

The fourth column operation control circuit 55 may generate the fourthbank address control signal CADDL_BG<4>, the fourth bank control pulseAYP_BG<4>, and the fourth internal bank control pulse IAYP_BG<4> inresponse to the synthesis control pulse AYP_SUM, the internal synthesiscontrol pulse IAYP_SUM, the fourth bank selection signal BG<4>, the modewrite signal 8B_WRB, and the mode read signal 8B_RDB.

The fourth column operation control circuit 57 may receive the modewrite signal 8B_WRB, which is disabled if the semiconductor device 100is out of the eight-bank write mode, and may generate the fourth bankcontrol pulse AYP_BG<4> from the fourth bank selection signal BG<4>,which is latched in synchronization with the synthesis control pulseAYP_SUM. The fourth column operation control circuit 57 may receive themode write signal 8B_WRB, which is enabled in the eight-bank write mode,and may interrupt the creation of the fourth bank control pulseAYP_BG<4>.

The fourth column operation control circuit 57 may receive the mode readsignal 8B_RDB, which is disabled if the semiconductor device 100 is outof the eight-bank read mode, and may generate the fourth internal bankcontrol pulse IAYP_BG<4> from the fourth bank selection signal BG<4>,which is latched in synchronization with the internal synthesis controlpulse IAYP_SUM. The fourth column operation control circuit 57 mayreceive the mode read signal 8B_RDB, which is enabled in the eight-bankread mode, and may interrupt the creation of the fourth internal bankcontrol pulse IAYP_BG<4>.

The fourth column operation control circuit 57 may receive the modesignal 8B_MB, which is disabled if the semiconductor device 100 is outof the eight-bank write mode and the eight-bank read mode, and maygenerate the fourth bank address control signal CADDL_BG<4> from thefourth bank selection signal BG<4>, which is latched in synchronizationwith the synthesis control pulse AYP_SUM. The fourth column operationcontrol circuit 57 may receive the mode read signal 8B_RDB, which isenabled in the eight-bank read mode, and may generate the fourth bankaddress control signal CADDL_BG<4> from the fourth bank selection signalBG<4>, which is latched in synchronization with the synthesis controlpulse AYP_SUM. The fourth column operation control circuit 57 mayreceive the mode write signal 8B_WRB, which is enabled in the eight-bankwrite mode, and may generate the fourth bank address control signalCADDL_BG<4> from the fourth bank selection signal BG<4>, which islatched in synchronization with the internal synthesis control pulseIAYP_SUM.

Referring to FIG. 6, the first column operation control circuit 51 mayinclude: a first bank selection signal latch 511; a second bankselection signal latch 512; inverters IV511, IV512, IV513, IV514, IV515,IV516, IV517, IV518, IV519, IV520, and IV521; PMOS transistors P511 andP512; and NAND gates NAND511 and NAND 512. The first bank selectionsignal latch 511 may latch the first bank selection signal BG<1> insynchronization with the synthesis control pulse AYP_SUM and output thelatched signal to a node nd511. The second bank selection signal latch512 may latch the first bank selection signal BG<1> in synchronizationwith the internal

PA3535-0 synthesis control pulse IAYP_SUM and output the latched signalto a node nd513. The PMOS transistor P511 may initialize the node nd511to a logic “high” level while a power-up signal PWRUPB is enabled tohave a logic “low” level. The PMOS transistor P512 may initialize thenode nd513 to a logic “high” level while the power-up signal PWRUPB isenabled to have a logic “low” level. The inverter IV511 may inverselybuffer a signal of the node nd511 and output the inversely bufferedsignal to a node nd512. The inverter IV512 may inversely buffer a signalof the node nd512 and output the inversely buffered signal to the nodend511. The inverters IV513 and IV514, which are sequentially connectedin series, may buffer the synthesis control pulse AYP_SUM and output thebuffered pulse. The NAND gate NAND511 may perform a logical NANDoperation of a signal of the node nd512 and an output signal of theinverter IV514. The inverter IV515 may inversely buffer an output signalof the

NAND gate NAND511 and output the inversely buffered signal as the firstbank control pulse AYP_BG<1>. The inverter IV516 may inversely buffer anoutput signal of the NAND gate NAND511 and output the inversely bufferedsignal as the first bank address control signal CADDL_BG<1>. Theinverter IV517 may inversely buffer a signal of the node nd513 andoutput the inversely buffered signal to a node nd514. The inverter IV518may inversely buffer a signal of the node nd514 and output the inverselybuffered signal to the node nd513. The inverters IV519 and IV520, whichare sequentially connected in series, may buffer the internal synthesiscontrol pulse IAYP_SUM and output the buffered pulse. The NAND gateNAND512 may perform a logical NAND operation of a signal of the nodend514, an output signal of the inverter IV520, and the mode signal8B_MB. The inverter IV521 may inversely buffer an output signal of theNAND gate NAND512 and output the inversely buffered signal as the firstinternal bank control pulse IAYP_BG<1>.

The first column operation control circuit 51 may receive the modesignal 8B_MB, which is disabled if the semiconductor device 100 is outof the eight-bank mode, and may generate the first internal bank controlpulse IAYP_BG<1> from the first bank selection signal BG<1>, which islatched in synchronization with the internal synthesis control pulseIAYP_SUM. The first column operation control circuit 51 may receive themode signal 8B_MB, which is enabled in the eight-bank mode, and mayinterrupt the creation of the first internal bank control pulseIAYP_BG<1>.

Referring to FIG. 7, the second column operation control circuit 53 mayinclude: a third bank selection signal latch 531; a fourth bankselection signal latch 532; inverters IV531, IV531, IV532, IV533, IV534,IV535, IV536, IV537, IV538, IV539, IV540, and IV541; PMOS transistorsP531 and P532; and NAND gates NAND531 and NAND 532. The third bankselection signal latch 531 may latch the second bank selection signalBG<2> in synchronization with the synthesis control pulse AYP_SUM andoutput the latched signal to a node nd531. The fourth bank selectionsignal latch 532 may latch the second bank selection signal BG<2> insynchronization with the internal synthesis control pulse IAYP_SUM andoutput the latched signal to a node nd533. The PMOS transistor P531 mayinitialize the node nd531 to a logic “high” level while the power-upsignal PWRUPB is enabled to have a logic “low” level. The PMOStransistor P532 may initialize the node nd533 to a logic “high” levelwhile the power-up signal PWRUPB is enabled to have a logic “low” level.The inverter IV531 may inversely buffer a signal of the node nd531 andoutput the inversely buffered signal to a node nd532. The inverter IV532may inversely buffer a signal of the node nd532 and output the inverselybuffered signal to the node nd531. The inverters IV533 and IV534, whichare sequentially connected in series, may buffer the synthesis controlpulse AYP_SUM and output the buffered pulse. The NAND gate NAND531 mayperform a logical NAND operation of a signal of the node nd532 and anoutput signal of the inverter IV534. The inverter IV535 may inverselybuffer an output signal of the NAND gate NAND531 and output theinversely buffered signal as the second bank control pulse AYP_BG<2>.The inverter IV536 may inversely buffer an output signal of the NANDgate NAND531 and output the inversely buffered signal as the second bankaddress control signal CADDL_BG<2>. The inverter IV537 may inverselybuffer a signal of the node nd533 and output the inversely bufferedsignal to a node nd534. The inverter IV538 may inversely buffer a signalof the node nd534 and output the inversely buffered signal to the nodend533. The inverters IV539 and IV540, which are sequentially connectedin series, may buffer the internal synthesis control pulse IAYP_SUM andoutput the buffered pulse. The NAND gate NAND532 may perform a logicalNAND operation of a signal of the node nd534, an output signal of theinverter IV540, and the mode signal 8B_MB. The inverter IV541 mayinversely buffer an output signal of the NAND gate NAND532 and outputthe inversely buffered signal as the second internal bank control pulseIAYP_BG<2>.

The second column operation control circuit 53 may receive the modesignal 8B_MB, which is disabled if the semiconductor device 100 is outof the eight-bank mode, and may generate the second internal bankcontrol pulse IAYP_BG<2> from the second bank selection signal BG<2>,which is latched in synchronization with the internal synthesis controlpulse IAYP_SUM. The second column operation control circuit 53 mayreceive the mode signal 8B_MB, which is enabled in the eight-bank mode,and may interrupt the creation of the second internal bank control pulseIAYP_BG<2>.

Referring to FIG. 8, the third column operation control circuit 55 mayinclude: a fifth bank selection signal latch 551; a sixth bank selectionsignal latch 552; inverters IV551, IV552, IV553, IV554, IV555, IV556,IV557, IV558, IV559, IV560, IV561, and IV562; PMOS transistors P551 andP552; NAND gates NAND551, NAND552, and NAND553; and a first selector553. The fifth bank selection signal latch 551 may latch the third bankselection signal BG<3> in synchronization with the synthesis controlpulse AYP_SUM and output the latched signal to a node nd551. The sixthbank selection signal latch 552 may latch the third bank selectionsignal BG<3> in synchronization with the internal synthesis controlpulse IAYP_SUM and output the latched signal to a node nd553. The PMOStransistor P551 may initialize the node nd551 to a logic “high” levelwhile the power-up signal PWRUPB is enabled to have a logic “low” level.The PMOS transistor P552 may initialize the node nd553 to a logic “high”level while the power-up signal PWRUPB is enabled to have a logic “low”level. The inverter IV551 may inversely buffer a signal of the nodend551 and output the inversely buffered signal to a node nd552. Theinverter IV552 may inversely buffer a signal of the node nd552 andoutput the inversely buffered signal to the node nd551. The invertersIV553 and IV554, which are sequentially connected in series, may bufferthe synthesis control pulse AYP_SUM and output the buffered pulse. TheNAND gate NAND551 may perform a logical NAND operation of a signal ofthe node nd552, an output signal of the inverter IV554, and the modewrite signal 8B_WRB. The inverter IV555 may inversely buffer an outputsignal of the NAND gate NAND551 and output the inversely buffered signalas the third bank control pulse AYP_BG<3>. The inverter IV557 mayinversely buffer a signal of the node nd553 and output the inverselybuffered signal to a node nd554. The inverter IV558 may inversely buffera signal of the node nd554 and output the inversely buffered signal tothe node nd553. The inverters IV559 and IV560, which are sequentiallyconnected in series, may buffer the internal synthesis control pulseIAYP_SUM and output the buffered pulse. The NAND gate NAND552 mayperform a logical NAND operation of a signal of the node nd554, anoutput signal of the inverter IV560 and the mode read signal 8B_RDB. Theinverter IV561 may inversely buffer an output signal of the NAND gateNAND551 and output the inversely buffered signal. The NAND gate NAND553may perform a logical NAND operation of an output signal of the NANDgate NAND551 and an output signal of the NAND gate NAND552. The firstselector 553 may selectively output an output signal of the inverterIV561 or an output signal of the NAND gate NAND553 as the third bankaddress control signal CADDL_BG<3> in response to the mode signal 8B_MB.The first selector 553 may receive the mode signal 8B_MB having a logic“high” level and output an output signal of the inverter IV561 as thethird bank address control signal CADDL_BG<3> if the semiconductordevice 100 is out of the eight-bank mode. The first selector 553 mayreceive the mode signal 8B_MB having a logic “low” level and output anoutput signal of the NAND gate NAND553 as the third bank address controlsignal CADDL_BG<3> in the eight-bank mode. The inverter IV562 mayinversely buffer an output signal of the NAND gate NAND552 and outputthe inversely buffered signal as the third internal bank control pulseIAYP_BG<3>.

The third column operation control circuit 55 may receive the mode writesignal 8B_WRB, which is disabled if the semiconductor device 100 is outof the eight-bank write mode, and may generate the third bank controlpulse AYP_BG<3> from the third bank selection signal BG<3>, which islatched in synchronization with the synthesis control pulse AYP_SUM. Thethird column operation control circuit 55 may receive the mode writesignal 8B_WRB, which is enabled in the eight-bank write mode, and mayinterrupt the creation of the third bank control pulse AYP_BG<3>. Thethird column operation control circuit 55 may receive the mode readsignal 8B_RDB, which is disabled if the semiconductor device 100 is outof the eight-bank read mode, and may generate the third internal bankcontrol pulse IAYP_BG<3> from the third bank selection signal BG<3>,which is latched in synchronization with the internal synthesis controlpulse IAYP_SUM. The third column operation control circuit 55 mayreceive the mode read signal 8B_RDB, which is enabled in the eight-bankread mode, and may interrupt the creation of the third internal bankcontrol pulse IAYP_BG<3>. The third column operation control circuit 55may receive the mode signal 8B_MB, which is disabled if thesemiconductor device 100 is out of the eight-bank write mode, and theeight-bank read mode and may generate the third bank address controlsignal CADDL_BG<3> from the third bank selection signal BG<3>, which islatched in synchronization with the synthesis control pulse AYP_SUM. Thethird column operation control circuit 55 may receive the mode readsignal 8B_RDB, which is enabled in the eight-bank read mode, and maygenerate the third bank address control signal CADDL_BG<3> from thethird bank selection signal BG<3>, which is latched in synchronizationwith the synthesis control pulse AYP_SUM. The third column operationcontrol circuit 55 may receive the mode write signal 8B_WRB, which isenabled in the eight-bank write mode, and may generate the third bankaddress control signal CADDL_BG<3> from the third bank selection signalBG<3>, which is latched in synchronization with the internal synthesiscontrol pulse IAYP_SUM.

Referring to FIG. 9, the fourth column operation control circuit 57 mayinclude: a seventh bank selection signal latch 571; an eighth bankselection signal latch 572; inverters IV571, IV572, IV573, IV574, IV575,IV577, IV578, IV579, IV580, IV581, and IV582; PMOS transistors P571 andP572; NAND gates NAND571, NAND572, and NAND573; and a second selector573. The seventh bank selection signal latch 571 may latch the fourthbank selection signal BG<4> in synchronization with the synthesiscontrol pulse AYP_SUM and output the latched signal to a node nd571. Theeighth bank selection signal latch 572 may latch the fourth bankselection signal BG<4> in synchronization with the internal synthesiscontrol pulse IAYP_SUM and output the latched signal to a node nd573.The PMOS transistor P571 may initialize the node nd571 to a logic “high”level while the power-up signal PWRUPB is enabled to have a logic “low”level. The PMOS transistor P572 may initialize the node nd573 to a logic“high” level while the power-up signal PWRUPB is enabled to have a logic“low” level. The inverter IV571 may inversely buffer a signal of thenode nd571 and output the inversely buffered signal to a node nd572. Theinverter IV572 may inversely buffer a signal of the node nd572 andoutput the inversely buffered signal to the node nd571. The invertersIV573 and IV574, which are sequentially connected in series, may bufferthe synthesis control pulse AYP_SUM and output the buffered pulse. TheNAND gate NAND571 may perform a logical NAND operation of a signal ofthe node nd572, an output signal of the inverter IV574, and the modewrite signal 8B_WRB. The inverter IV575 may inversely buffer an outputsignal of the NAND gate NAND571 and output the inversely buffered signalas the fourth bank control pulse AYP_BG<4>. The inverter IV577 mayinversely buffer a signal of the node nd573 and output the inverselybuffered signal to a node nd574. The inverter IV578 may inversely buffera signal of the node nd574 and output the inversely buffered signal tothe node nd573. The inverters IV579 and IV580, which are sequentiallyconnected in series, may buffer the internal synthesis control pulseIAYP_SUM and output the buffered pulse. The NAND gate NAND572 mayperform a logical NAND operation of a signal of the node nd574, anoutput signal of the inverter IV580, and the mode read signal 8B_RDB.The inverter IV581 may inversely buffer an output signal of the NANDgate NAND571 and output the inversely buffered signal. The NAND gateNAND573 may perform a logical NAND operation of an output signal of theNAND gate NAND571 and an output signal of the NAND gate NAND572. Thesecond selector 573 may selectively output an output signal of theinverter IV581 or an output signal of the NAND gate NAND573 as thefourth bank address control signal CADDL_BG<4> in response to the modesignal 8B_MB. The second selector 573 may receive the mode signal 8B_MBhaving a logic “high” level and output an output signal of the inverterIV581 as the fourth bank address control signal CADDL_BG<4> if thesemiconductor device 100 is out of the eight-bank mode. The secondselector 573 may receive the mode signal 8B_MB having a logic “low”level and output an output signal of the NAND gate NAND573 as the fourthbank address control signal CADDL_BG<4> in the eight-bank mode. Theinverter IV582 may inversely buffer an output signal of the NAND gateNAND572 and output the inversely buffered signal as the fourth internalbank control pulse IAYP_BG<4>.

The fourth column operation control circuit 57 may receive the modewrite signal 8B_WRB, which is disabled if the semiconductor device 100is out of the eight-bank write mode, and may generate the fourth bankcontrol pulse AYP_BG<4> from the fourth bank selection signal BG<4>,which is latched in synchronization with the synthesis control pulseAYP_SUM. The fourth column operation control circuit 57 may receive themode write signal 8B_WRB, which is enabled in the eight-bank write mode,and may interrupt the creation of the fourth bank control pulseAYP_BG<4>. The fourth column operation control circuit 57 may receivethe mode read signal 8B_RDB, which is disabled if the semiconductordevice 100 is out of the eight-bank read mode, and may generate thefourth internal bank control pulse IAYP_BG<4> from the fourth bankselection signal BG<4>, which is latched in synchronization with theinternal synthesis control pulse IAYP_SUM. The fourth column operationcontrol circuit 57 may receive the mode read signal 8B_RDB, which isenabled in the eight-bank read mode, and may interrupt the creation ofthe fourth internal bank control pulse IAYP_BG<4>. The fourth columnoperation control circuit 57 may receive the mode signal 8B_MB, which isdisabled if the semiconductor device 100 is out of the eight-bank writemode and the eight-bank read mode, and may generate the fourth bankaddress control signal CADDL_BG<4> from the fourth bank selection signalBG<4>, which is latched in synchronization with the synthesis controlpulse AYP_SUM. The fourth column operation control circuit 57 mayreceive the mode read signal 8B_RDB, which is enabled in the eight-bankread mode, and may generate the fourth bank address control signalCADDL_BG<4> from the fourth bank selection signal BG<4>, which islatched in synchronization with the synthesis control pulse AYP_SUM. Thefourth column operation control circuit 57 may receive the mode writesignal 8B_WRB, which is enabled in the eight-bank write mode, and maygenerate the fourth bank address control signal CADDL_BG<4> from thefourth bank selection signal BG<4>, which is latched in synchronizationwith the internal synthesis control pulse IAYP_SUM.

Referring to FIG. 10, the bank column address generation circuit 6 mayinclude a first address latch 61, a second address latch 62, a thirdaddress latch 63, and a fourth address latch 64. The first address latch61 may latch the column address CADD and output the latched address asthe first bank column address BYADD_BG<1> if the first bank addresscontrol signal CADDL_BG<1> is enabled to have a logic “high” level. Thesecond address latch 62 may latch the column address CADD and output thelatched address as the second bank column address BYADD_BG<2> if thesecond bank address control signal CADDL_BG<2> is enabled to have alogic “high” level. The third address latch 63 may latch the columnaddress CADD and output the latched address as the third bank columnaddress BYADD_BG<3> if the third bank address control signal CADDL_BG<3>is enabled to have a logic “high” level. The fourth address latch 64 maylatch the column address CADD and output the latched address as thefourth bank column address BYADD_BG<4> if the fourth bank addresscontrol signal CADDL_BG<4> is enabled to have a logic “high” level.

Referring to FIG. 11, the column I/O pulse synthesis circuit 7 mayinclude NOR gates NOR71, NOR72, NOR73, and NOR74 and inverters IV71,IV72, IV73, and IV74. The NOR gate NOR71 and the inverter IV71 maytogether perform a logical OR operation of the first bank control pulseAYP_BG<1> and the first internal bank control pulse IAYP_BG<1> togenerate the first bank synthesis control pulse AYPSUM_BG<1>. The NORgate NOR72 and the inverter IV72 may together perform a logical ORoperation of the second bank control pulse AYP_BG<2> and the secondinternal bank control pulse IAYP_BG<2> to generate the second banksynthesis control pulse AYPSUM_BG<2>. The NOR gate NOR73 and theinverter IV73 may together perform a logical OR operation of the thirdbank control pulse AYP_BG<3> and the third internal bank control pulseIAYP_BG<3> to generate the third bank synthesis control pulseAYPSUM_BG<3>. The NOR gate NOR74 and the inverter IV74 may togetherperform a logical OR operation of the fourth bank control pulseAYP_BG<4> and the fourth internal bank control pulse IAYP_BG<4> togenerate the fourth bank synthesis control pulse AYPSUM_BG<4>. Thecolumn I/O pulse synthesis circuit 7 may generate the first banksynthesis control pulse AYPSUM_BG<1> if the first bank control pulseAYP_BG<1> or the first internal bank control pulse IAYP_BG<1> iscreated. The column I/O pulse synthesis circuit 7 may generate thesecond bank synthesis control pulse AYPSUM_BG<2> if the second bankcontrol pulse AYP_BG<2> or the second internal bank control pulseIAYP_BG<2> is created. The column I/O pulse synthesis circuit 7 maygenerate the third bank synthesis control pulse AYPSUM_BG<3> if thethird bank control pulse AYP_BG<3> or the third internal bank controlpulse IAYP_BG<3> is created. The column I/O pulse synthesis circuit 7may generate the fourth bank synthesis control pulse AYPSUM_BG<4> if thefourth bank control pulse AYP_BG<4> or the fourth internal bank controlpulse IAYP_BG<4> is created.

Operations of the semiconductor device 100 having the aforementionedconfiguration are described hereinafter with reference to FIGS. 12 and13 in conjunction with an example in which the semiconductor device 100is in the eight-bank read mode and an example in which the semiconductordevice 100 is in the eight-bank write mode.

As illustrated in FIG. 12, if an eight-bank read command 8bank_RD_Cmd isinputted to the semiconductor device 100 to put the semiconductor device100 in the eight-bank read mode, then the mode signal 8B_MB and the moderead signal 8B_RDB may be enabled to have a logic “low” level, and theread command pulse ERD may be created. The read command pulse ERD may beshifted to sequentially generate the read column control pulse RDAYP andthe internal read column control pulse IRDAYP. The synthesis controlpulse AYP_SUM and the internal synthesis control pulse IAYP_SUM may besequentially generated in synchronization with the read column controlpulse RDAYP and the internal read column control pulse IRDAYP,respectively. The first bank address control signal CADDL_BG<1>, thethird bank address control signal CADDL_BG<3>, the first bank controlpulse AYP_BG<1>, and the third bank control pulse AYP_BG<3> may begenerated in synchronization with the synthesis control pulse AYP_SUM. Abank included in the first bank group may be selected by a logic levelcombination ‘X’ of the first bank column address BYADD_BG<1>, which isgenerated by latching the column address CADD in synchronization withthe first bank address control signal CADDL_BG<1>, and data having thepredetermined number of bits may be outputted from the selected bank bythe first bank synthesis control pulse AYPSUM_BG<1>, which is generatedin synchronization with the first bank control pulse AYP_BG<1>. Forexample, if the burst length is set to be ‘BL32,’ then sixteen-bit datamay be outputted from the bank included in the first bank group. A bankincluded in the third bank group may be selected by a logic levelcombination ‘X’ of the third bank column address BYADD_BG<3>, which isgenerated by latching the column address CADD in synchronization withthe third bank address control signal CADDL_BG<3>, and data having thepredetermined number of bits may be outputted from the selected bank bythe third bank synthesis control pulse AYPSUM_BG<3>, which is generatedin synchronization with the third bank control pulse AYP_BG<3>. Forexample, if the burst length is set to be ‘BL32,’ then sixteen-bit datamay be outputted from the bank included in the third bank group. In theeight-bank read mode, the data of the bank included in the first bankgroup and the data of the bank included in the third bank group may besimultaneously loaded on a data line, and the data loaded on the dataline may be outputted from the semiconductor device 100 through datapaths after an output sequence of the data is determined according tothe burst length. Although the present embodiment describes theeight-bank read mode in which the sixteen-bit data of the bank includedin the first bank group and the sixteen-bit data of the bank included inthe third bank group are outputted, the present disclosure is notlimited thereto. For example, the number of the bank groups and thenumber of bits included in the data may be different in differentembodiments.

The words “simultaneous” and “simultaneously” as used herein withrespect to occurrences mean that the occurrences take place onoverlapping intervals of time. For example, if a first occurrence takesplace over a first interval of time and a second occurrence takes placesimultaneously over a second interval of time, then the first and secondintervals overlap each other such that there exists at least one time atwhich the first and second occurrences are both taking place.

As illustrated in FIG. 13, if an eight-bank write command 8bank_WT_Cmdis inputted to the semiconductor device 100 to put the semiconductordevice 100 in the eight-bank write mode, then the mode signal 8B_MB andthe mode write signal 8B_WRB may be enabled to have a logic “low” level,and the write command pulse EWT may be created. The write command pulseEWT may be shifted to sequentially generate the write column controlpulse WTAYP and the internal write column control pulse IWTAYP. Thesynthesis control pulse AYP_SUM and the internal synthesis control pulseIAYP_SUM may be sequentially generated in synchronization with the writecolumn control pulse WTAYP and the internal write column control pulseIWTAYP, respectively. The first bank address control signal CADDL_BG<1>and the first bank control pulse AYP_BG<1> may be generated insynchronization with the synthesis control pulse AYP_SUM. The third bankaddress control signal CADDL_BG<3> and the third internal bank controlpulse IAYP_BG<3> may be generated in synchronization with the internalsynthesis control pulse IAYP_SUM. A bank included in the first bankgroup may be selected by a logic level combination ‘Y’ of the first bankcolumn address BYADD_BG<1>, which is generated by latching the columnaddress CADD in synchronization with the first bank address controlsignal CADDL_BG<1>, and data having the predetermined number of bits maybe inputted into the selected bank by the first bank synthesis controlpulse AYPSUM_BG<1>, which is generated in synchronization with the firstbank control pulse AYP_BG<1>. For example, if the burst length is set tobe ‘BL32,’ then sixteen-bit data may be inputted into the bank includedin the first bank group. A bank included in the third bank group may beselected by a logic level combination ‘Y’ of the third bank columnaddress BYADD_BG<3>, which is generated by latching the column addressCADD in synchronization with the third bank address control signalCADDL_BG<3>, and data having the predetermined number of bits may beinputted into the selected bank by the third bank synthesis controlpulse AYPSUM_BG<3>, which is generated in synchronization with the thirdinternal bank control pulse IAYP_BG<3>. For example, if the burst lengthis set to be ‘BL32,’ sixteen-bit data may be inputted into the bankincluded in the third bank group. In the eight-bank write mode, thesixteen-bit data may be inputted into the bank included in the firstbank group, and the sixteen-bit data may then be inputted into the bankincluded in the third bank group. Although the present embodimentdescribes the eight-bank write mode in which the sixteen-bit data areinputted into the bank included in the first bank group and thesixteen-bit data are then inputted into the bank included in the thirdbank group, the present disclosure is not limited thereto. For example,the number of the bank groups and the number of bits included in thedata may be different in embodiments.

As described above, a semiconductor device 100 according to anembodiment of the present teachings may simultaneously output datastored in separate bank groups to data paths and may then sequentiallyoutput the data loaded on the data paths to an external device accordingto a burst length, in an eight-bank read mode. In addition, thesemiconductor device 100 may sequentially store data into banks includedin separate bank groups, in an eight-bank write mode. If a command isinputted to the semiconductor device 100 to put the semiconductor device100 in the eight-bank read mode or the eight-bank write mode, then datastored in banks included in a plurality of bank groups may be outputtedor data may be inputted into the banks included in the plurality of bankgroups. As a result, it may be possible to reduce the time and energyconsumed in a column operation for outputting or receiving the data.

According to the embodiment described above, if a command is inputted toa semiconductor device 100 once, column operations of a plurality ofbanks may be performed together to reduce the time it takes to performthe column operations as well as the energy consumed during the columnoperations.

The semiconductor device 100 described with reference to FIGS. 1 to 13may be integrated into an electronic system that includes a memorysystem, a graphic system, a computing system, a mobile system, or thelike. For example, as illustrated in FIG. 14, an electronic system 1000according an embodiment may include a data storage circuit 1001, amemory controller 1002, a buffer memory 1003, and an input/output (I/O)interface 1004.

The data storage circuit 1001 may store data which are outputted fromthe memory controller 1002 or may read and output the stored data to thememory controller 1002, according to a control signal outputted from thememory controller 1002. The data storage circuit 1001 may include thesemiconductor device 100 illustrated in FIG. 1. The data storage circuit1001 may include nonvolatile memory that can retain its stored data evenwhen its power supply is interrupted. The nonvolatile memory may be aflash memory, such as a NOR-type flash memory or a NAND-type flashmemory, a phase change random access memory (PRAM), a resistive randomaccess memory (RRAM), a spin transfer torque random access memory(STTRAM), a magnetic random access memory (MRAM), or the like.

The memory controller 1002 may receive a command outputted from anexternal device (e.g., a host device) through the I/O interface 1004 andmay decode the command outputted from the host device to control anoperation for inputting data into the data storage circuit 1001 or thebuffer memory 1003 or for outputting the data stored in the data storagecircuit 1001 or the buffer memory 1003. Although FIG. 14 illustrates thememory controller 1002 with a single block, the memory controller 1002may include one controller for controlling the data storage circuit 1001and another controller for controlling the buffer memory 1003, of thebuffer memory being volatile memory.

The buffer memory 1003 may temporarily store data to be processed by thememory controller 1002. That is, the buffer memory 1003 may temporarilystore the data which are outputted from or to be inputted to the datastorage circuit 1001. The buffer memory 1003 may store the data, whichare outputted from the memory controller 1002, according to a controlsignal. The buffer memory 1003 may read and output the stored data tothe memory controller 1002. The buffer memory 1003 may include avolatile memory, such as a dynamic random access memory (DRAM), a mobileDRAM, or a static random access memory (SRAM).

The I/O interface 1004 may physically and electrically connect thememory controller 1002 to the external device (i.e., the host). Thus,the memory controller 1002 may receive control signals and data suppliedfrom the external device (i.e., the host) through the I/O interface 1004and may output the data outputted from the memory controller 1002 to theexternal device (i.e., the host) through the I/O interface 1004. Thatis, the electronic system 1000 may communicate with the host through theI/O interface 1004. The I/O interface 1004 may include any one ofvarious interface protocols, such as a universal serial bus (USB), amulti-media card (MMC), a peripheral component interconnect-express(PCI-E), a serial attached SCSI (SAS), a serial AT attachment (SATA), aparallel AT attachment (PATA), a small computer system interface (SCSI),an enhanced small device interface (ESDI), and an integrated driveelectronics (IDE).

The electronic system 1000 may be used as an auxiliary storage device ofthe host or an external storage device. The electronic system 1000 mayinclude a solid state disk (SSD), a USB memory, a secure digital (SD)card, a mini secure digital (mSD) card, a micro secure digital (microSD) card, a secure digital high capacity (SDHC) card, a memory stickcard, a smart media (SM) card, a multi-media card (MMC), an embeddedmulti-media card (eMMC), a compact flash (CF) card, or the like.

What is claimed is:
 1. A semiconductor device comprising: a column operation control circuit configured to generate first and second bank address control signals as well as first and second bank control pulses from first and second bank selection signals in response to a synthesis control pulse such that data in a first bank and data in a second bank are simultaneously outputted in a first mode; and a bank column address generation circuit configured to generate first and second bank column addresses for selecting the first and second banks from a column address in response to the first and second bank address control signals.
 2. The semiconductor device of claim 1, wherein, in the first mode, data having a number of bits determined according to a burst length are outputted from at least two banks by one command.
 3. The semiconductor device of claim 1, wherein the synthesis control pulse is generated in synchronization with a read command pulse to activate the first mode, wherein the read command pulse is created by decoding an external control signal.
 4. The semiconductor device of claim 1, wherein the column operation control circuit is further configured to: latch the first bank selection signal in synchronization with the synthesis control pulse; generate the first bank address control signal and the first bank control pulse from the latched first bank selection signal; latch the second bank selection signal in synchronization with the synthesis control pulse; and generate the second bank address control signal and the second bank control pulse from the latched second bank selection signal.
 5. The semiconductor device of claim 1, further comprising a column input and output (I/O) pulse synthesis circuit configured to generate first and second bank synthesis control pulses, in response to the first and second bank control pulses, for controlling column operations for outputting the data in the first and second banks.
 6. The semiconductor device of claim 1, wherein the column operation control circuit is configured to: generate the first bank address control signal and the first bank control pulse from the first bank selection signal in response to the synthesis control pulse such that data are inputted into the second bank after data are inputted into the first bank in a second mode; and generate the second bank address control signal and an internal bank control pulse from the second bank selection signal in response to an internal synthesis control pulse.
 7. The semiconductor device of claim 6, wherein, in the second mode, data having a number of bits determined according to a burst length are inputted into at least two banks by one command.
 8. The semiconductor device of claim 6, wherein the synthesis control pulse is generated in synchronization with a write command pulse to activate the second mode, wherein the write command pulse is created by decoding an external control signal, to activate the second mode.
 9. The semiconductor device of claim 6, wherein the internal synthesis control pulse is generated after a predetermined period of time elapses from when the synthesis control pulse is created.
 10. The semiconductor device of claim 6, wherein, in the second mode, the column operation control circuit is further configured to: latch the first bank selection signal in synchronization with the synthesis control pulse; generate the first bank address control signal and the first bank control pulse from the latched first bank selection signal; latch the second bank selection signal in synchronization with the internal synthesis control pulse; and generate the second bank address control signal and the internal bank control pulse from the latched second bank selection signal.
 11. The semiconductor device of claim 6, further comprising a column input and output I/O pulse synthesis circuit configured to: generate a first bank synthesis control pulse, in response to the first bank control pulse, for controlling a column operation for inputting data into the first bank; and generate a second bank synthesis control pulse, in response to the internal bank control pulse, for controlling a column operation for inputting data into the second bank.
 12. A semiconductor device comprising: a column operation control circuit configured to: generate a first bank address control signal and a bank control pulse from a first bank selection signal in response to a synthesis control pulse such that data are inputted into a second bank after data are inputted into a first bank; and generate a second bank address control signal and an internal bank control pulse from a second bank selection signal in response to an internal synthesis control pulse; and a bank column address generation circuit configured to generate first and second bank column addresses for selecting the first and second banks from a column address in response to the first and second bank address control signals.
 13. The semiconductor device of claim 12, wherein the synthesis control pulse is generated in synchronization with a write command pulse, wherein the write command pulse is created by decoding an external control signal.
 14. The semiconductor device of claim 12, wherein the internal synthesis control pulse is generated after a predetermined period of time elapses from when the synthesis control pulse is created.
 15. The semiconductor device of claim 12, wherein the column operation control circuit is further configured to: latch the first bank selection signal in synchronization with the synthesis control pulse; generate the first bank address control signal and the bank control pulse from the latched first bank selection signal; latch the second bank selection signal in synchronization with the internal synthesis control pulse; and generate the second bank address control signal and the internal bank control pulse from the latched second bank selection signal.
 16. The semiconductor device of claim 12, further comprising a column input and output (I/O) pulse synthesis circuit configured to: generate a first bank synthesis control pulse, in response to the first bank control pulse, for controlling a column operation for inputting data into the first bank; and generate a second bank synthesis control pulse, in response to the internal bank control pulse, for controlling a column operation for inputting data into the second bank.
 17. A semiconductor device comprising: a synthesis control pulse generation circuit configured to at least one of: generate a synthesis control pulse in synchronization with a read command pulse, wherein the read command pulse is created by decoding an external control signal to activate a first mode; and generate the synthesis control pulse and an internal synthesis control pulse in synchronization with a write command pulse, wherein the write command pulse is created by decoding the external control signal to activate a second mode; and a column operation control circuit configured to generate first and second bank address control signals as well as first and second bank control pulses from first and second bank selection signals in response to the synthesis control pulse such that data in a first bank and data in a second bank are simultaneously outputted in the first mode.
 18. The semiconductor device of claim 17, wherein the column operation control circuit is configured to: latch the first bank selection signal in synchronization with the synthesis control pulse; generate the first bank address control signal and the first bank control pulse from the latched first bank selection signal; latch the second bank selection signal in synchronization with the synthesis control pulse; and generate the second bank address control signal and the second bank control pulse from the latched second bank selection signal.
 19. The semiconductor device of claim 17, wherein the column operation control circuit is configured to: generate the first bank address control signal and the first bank control pulse from the first bank selection signal in response to the synthesis control pulse such that data are inputted into the second bank after data are inputted into the first bank in the second mode; and generate the second bank address control signal and an internal bank control pulse from the second bank selection signal in response to an internal synthesis control pulse.
 20. The semiconductor device of claim 19, wherein, in the second mode, the column operation control circuit is configured to: latch the first bank selection signal in synchronization with the synthesis control pulse; generate the first bank address control signal and the first bank control pulse from the latched first bank selection signal; latch the second bank selection signal in synchronization with the internal synthesis control pulse; and generate the second bank address control signal and the internal bank control pulse from the latched second bank selection signal. 